Tytuł pozycji:
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers.
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Tytuł:
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Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers.
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Autorzy:
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Yang, J. (AUTHOR)
Wang, B. B. (AUTHOR)
Zhao, D. G. (AUTHOR)
Liu, Z. S. (AUTHOR)
Liang, F. (AUTHOR)
Chen, P. (AUTHOR)
Zhang, Y. H. (AUTHOR)
Zhang, Z. Z. (AUTHOR)
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Źródło:
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Journal of Applied Physics. 11/7/2021, Vol. 130 Issue 17, p1-6. 6p.
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