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Tytuł pozycji:

Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography.

Tytuł :
Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography.
Autorzy :
Chang KS; Division of Instrument Development, Korea Basic Science Institute, Daejeon, Korea. />Yang SC
Kim JY
Kook MH
Ryu SY
Choi HY
Kim GH
Pokaż więcej
Źródło :
Sensors (Basel, Switzerland) [Sensors (Basel)] 2012; Vol. 12 (4), pp. 4648-60. Date of Electronic Publication: 2012 Apr 10.
Typ publikacji :
Journal Article
Język :
English
Imprint Name(s) :
Original Publication: Basel, Switzerland : MDPI, c2000-
References :
Opt Lett. 2004 Nov 15;29(22):2656-8. (PMID: 15552676)
Nat Nanotechnol. 2010 Jul;5(7):497-501. (PMID: 20453854)
Sensors (Basel). 2009;9(7):5068-75. (PMID: 22346688)
Rev Sci Instrum. 2007 Jun;78(6):064903. (PMID: 17614631)
Science. 2005 May 27;308(5726):1274-8. (PMID: 15919985)
Contributed Indexing :
Keywords: infrared*; light-emitting diode (LED)*; temperature*; thermography*
Entry Date(s) :
Date Created: 20120606 Date Completed: 20121001 Latest Revision: 20181113
Update Code :
20210623
PubMed Central ID :
PMC3355432
DOI :
10.3390/s120404648
PMID :
22666050
Czasopismo naukowe
A method of measuring the precise temperature distribution of GaN-based light-emitting diodes (LEDs) by quantitative infrared micro-thermography is reported. To reduce the calibration error, the same measuring conditions were used for both calibration and thermal imaging; calibration was conducted on a highly emissive black-painted area on a dummy sapphire wafer loaded near the LED wafer on a thermoelectric cooler mount. We used infrared thermal radiation images of the black-painted area on the dummy wafer and an unbiased LED wafer at two different temperatures to determine the factors that degrade the accuracy of temperature measurement, i.e., the non-uniform response of the instrument, superimposed offset radiation, reflected radiation, and emissivity map of the LED surface. By correcting these factors from the measured infrared thermal radiation images of biased LEDs, we determined a precise absolute temperature image. Consequently, we could observe from where the local self-heat emerges and how it distributes on the emitting area of the LEDs. The experimental results demonstrated that highly localized self-heating and a remarkable temperature gradient, which are detrimental to LED performance and reliability, arise near the p-contact edge of the LED surface at high injection levels owing to the current crowding effect.

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