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Tytuł pozycji:

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

Tytuł :
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.
Autorzy :
Kim C
Moon I
Lee D
Choi MS
Ahmed F
Nam S; Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
Cho Y; Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
Shin HJ; Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
Park S; Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
Yoo WJ
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Źródło :
ACS nano [ACS Nano] 2017 Feb 28; Vol. 11 (2), pp. 1588-1596. Date of Electronic Publication: 2017 Jan 23.
Typ publikacji :
Journal Article; Research Support, Non-U.S. Gov't
Język :
English
Imprint Name(s) :
Original Publication: Washington D.C. : American Chemical Society
Contributed Indexing :
Keywords: Fermi level pinning*; Schottky barrier height*; contact resistance*; molybdenum disulfide*; molybdenum ditelluride*; transition metal dichalcogenides*
Entry Date(s) :
Date Created: 20170117 Date Completed: 20181010 Latest Revision: 20181010
Update Code :
20210914
DOI :
10.1021/acsnano.6b07159
PMID :
28088846
Czasopismo naukowe
Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (R c ). Until now, Fermi level pinning of monolayer TMDCs has been reported only theoretically, although that of bulk TMDCs has been reported experimentally. Here, we report the experimental study on Fermi level pinning of monolayer MoS 2 and MoTe 2 by interpreting the thermionic emission results. We also quantitatively compared our results with the theoretical simulation results of the monolayer structure as well as the experimental results of the bulk structure. We measured the pinning factor S to be 0.11 and -0.07 for monolayer MoS 2 and MoTe 2 , respectively, suggesting a much stronger Fermi level pinning effect, a Schottky barrier height (SBH) lower than that by theoretical prediction, and interestingly similar pinning energy levels between monolayer and bulk MoS 2 . Our results further imply that metal work functions have very little influence on contact properties of 2D-material-based devices. Moreover, we found that R c is exponentially proportional to SBH, and these processing parameters can be controlled sensitively upon chemical doping into the 2D materials. These findings provide a practical guideline for depinning Fermi level at the 2D interfaces so that polarity control of TMDC-based semiconductors can be achieved efficiently.

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