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Tytuł pozycji:

Phase-Engineered Molybdenum Telluride/Black Phosphorus Van der Waals Heterojunctions for Tunable Multivalued Logic.

Tytuł :
Phase-Engineered Molybdenum Telluride/Black Phosphorus Van der Waals Heterojunctions for Tunable Multivalued Logic.
Autorzy :
Hassan Y; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea.
Srivastava PK; School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea.
Singh B; Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067, India.
Abbas MS; Department of Physics, Sungkyunkwan University, Suwon 16419, South Korea.
Ali F; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea.
Yoo WJ; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea.
Lee C; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea.; School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Mar 25; Vol. 12 (12), pp. 14119-14124. Date of Electronic Publication: 2020 Mar 10.
Typ publikacji :
Journal Article
Język :
English
Imprint Name(s) :
Original Publication: Washington, D.C. : American Chemical Society
Contributed Indexing :
Keywords: MoTe2; black phosphorus; field-effect transistors; multivalued logic devices; structural phase
Entry Date(s) :
Date Created: 20200229 Latest Revision: 20200326
Update Code :
20210914
DOI :
10.1021/acsami.9b20041
PMID :
32108466
Czasopismo naukowe
Recently, multivalued logic (MVL) circuits have attracted tremendous interest due to their ability to process more data by increasing the number of logic states rather than the integration density. Here, we fabricate logic circuits based on molybdenum telluride (MoTe 2 )/black phosphorus (BP) van der Waals heterojunctions with different structural phases of MoTe 2 . Owing to the different electrical properties of the 2H and mixed 2H +1T' phases of MoTe 2 , tunable logic devices have been realized. A logic circuit based on a BP field-effect transistor (FET) and a BP/MoTe 2 (2H + 1T') heterojunction FET displays the characteristics of binary logic. However, a drain voltage-controlled transition from binary to ternary logic has been observed in BP FET- and BP/ MoTe 2 (2H) heterojunction FET-based logic circuits. Also, a change from binary to ternary characteristics has been observed in BP/MoTe 2 (2H)-based inverters at low temperature below 240 K. We believe that this work will stimulate the assessment of the structural phase transition in metal dichalcogenides toward advanced logic circuits and offer a pathway to substantialize the circuit standards for future MVL systems.

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