Hidden Vacancy Benefit in Monolayer 2D Semiconductors.

Szczegóły
Abstrakt

Tytuł:: Hidden Vacancy Benefit in Monolayer 2D Semiconductors.
Autorzy:: Zhang X; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Liao Q; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.; State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Kang Z; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.; State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Liu B; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Liu X; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.; Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.
Ou Y; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Xiao J; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Du J; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Liu Y; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Gao L; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Gu L; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.; Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.
Hong M; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Yu H; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Zhang Z; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.; State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Duan X; Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA.
Zhang Y; Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China.; State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Źródło:: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2021 Feb; Vol. 33 (7), pp. e2007051. Date of Electronic Publication: 2021 Jan 14.
Typ publikacji:: Journal Article
Język:: English
Imprint Name(s):: Publication: Sept. 3, 1997- : Weinheim : Wiley-VCH
Original Publication: Deerfield Beach, FL : VCH Publishers, 1989-
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Grant Information:: 51527802 National Natural Science Foundation of China; 51991340 National Natural Science Foundation of China; 51991342 National Natural Science Foundation of China; 51972022 National Natural Science Foundation of China; 51722203 National Natural Science Foundation of China; 51672026 National Natural Science Foundation of China; B14003 Overseas Expertise Introduction Projects for Discipline Innovation; 2018YFA0703503 National Key Research and Development Program of China; 2016YFA0202701 National Key Research and Development Program of China; Z180011 Natural Science Foundation of Beijing Municipality; FRF-TP-18-004A2 Fundamental Research Funds for the Central Universities; FRF-TP-18-001C1 Fundamental Research Funds for the Central Universities; FRF-TP-19-025A3 Fundamental Research Funds for the Central Universities
Contributed Indexing:: Keywords: defect engineering; electrical transport; field-effect transistors; monolayer MoS 2; sulfur vacancies
Entry Date(s):: Date Created: 20210115 Latest Revision: 20210217
Update Code:: 20240105
DOI:: 10.1002/adma.202007051
PMID:: 33448081
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Monolayer 2D semiconductors (e.g., MoS 2 ) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. Minimizing the lattice defects in 2D semiconductors represents a common strategy to improve their electronic properties, but has met with limited success to date. Herein, a hidden benefit of the atomic vacancies in monolayer 2D semiconductors to push their performance limit is reported. By purposely tailoring the sulfur vacancies (SVs) to an optimum density of 4.7% in monolayer MoS 2 , an unusual mobility enhancement is obtained and a record-high carrier mobility (>115 cm 2 V -1 s -1 ) is achieved, realizing monolayer MoS 2 transistors with an exceptional current density (>0.60 mA µm -1 ) and a record-high on/off ratio >10 10 , and enabling a logic inverter with an ultrahigh voltage gain >100. The systematic transport studies reveal that the counterintuitive vacancy-enhanced transport originates from a nearest-neighbor hopping conduction model, in which an optimum SV density is essential for maximizing the charge hopping probability. Lastly, the vacancy benefit into other monolayer 2D semiconductors is further generalized; thus, a general strategy for tailoring the charge transport properties of monolayer materials is defined.
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