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Tytuł:
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Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories.
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Autorzy:
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Jeon HU; Department of Electronic Materials Engineering, Kwangwoon University, 20 Gwangun-ro, Nowon-gu, Seoul 01897, Korea.
Cho WJ; Department of Electronic Materials Engineering, Kwangwoon University, 20 Gwangun-ro, Nowon-gu, Seoul 01897, Korea.
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Źródło:
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Sensors (Basel, Switzerland) [Sensors (Basel)] 2021 Jun 28; Vol. 21 (13). Date of Electronic Publication: 2021 Jun 28.
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Typ publikacji:
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Journal Article
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Język:
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English
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Imprint Name(s):
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Original Publication: Basel, Switzerland : MDPI, c2000-
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MeSH Terms:
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Biosensing Techniques*
Gallium*
Zinc Oxide*
Indium ; Transistors, Electronic ; Zinc
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References:
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Clin Biochem Rev. 2014 Aug;35(3):155-67. (PMID: 25336761)
Sensors (Basel). 2019 Sep 28;19(19):. (PMID: 31569330)
IEEE Trans Biomed Eng. 1970 Jan;17(1):70-1. (PMID: 5441220)
Sensors (Basel). 2018 Nov 20;18(11):. (PMID: 30463318)
Sensors (Basel). 2009;9(9):7111-31. (PMID: 22423205)
Sci Rep. 2019 Apr 16;9(1):6144. (PMID: 30992533)
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Grant Information:
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2020R1A2C1007586 National Research Foundation of Korea; P0002397 Korea Institute for Advancement of Technology
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Contributed Indexing:
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Keywords: amorphous oxide semiconductor; embedded resistive switching memories; ion-sensitive field-effect transistor; multi-level state; resistive coupling effect
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Substance Nomenclature:
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045A6V3VFX (Indium)
CH46OC8YV4 (Gallium)
J41CSQ7QDS (Zinc)
SOI2LOH54Z (Zinc Oxide)
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Entry Date(s):
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Date Created: 20210702 Date Completed: 20210706 Latest Revision: 20210713
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Update Code:
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20240105
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PubMed Central ID:
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PMC8271403
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DOI:
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10.3390/s21134435
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PMID:
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34203521
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This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide ( a -IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resistive switching (RS) memory connected, and a floating gate (FG) that modulates the channel conductance of the a -IGZO TFT. The resistive coupling between the RS memories connected to the CG and SG produces sensitivity properties that considerably exceed the limit of conventional ion-sensitive field-effect transistor (ISFET)-based sensors. The resistances of the embedded RS memories were determined by applying a voltage to the CG-FG and SG-FG structures independently and adjusting the compliance current. Sensors constructed using RS memories with different resistance ratios yielded a pH sensitivity of 50.5 mV/pH ( R CG : R SG = 1:1), 105.2 mV/pH ( R CG : R SG = 2:1), and 161.9 mV/pH ( R CG : R SG = 3:1). Moreover, when the R CG : R SG = 3:1, the hysteresis voltage width ( V H ) and drift rate were 54.4 mV and 32.9 mV/h, respectively. As the increases in V H and drift rate are lower than the amplified sensitivity, the sensor performs capably. The proposed device is viable as a versatile sensing device capable of detecting various substances, such as cells, antigens, DNA, and gases.
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