Re-examination of the Aqueous Stability of Atomic Layer Deposited (ALD) Amorphous Alumina (Al 2 O 3 ) Thin Films and the Use of a Postdeposition Air Plasma Anneal to Enhance Stability.

Amorphous aluminum oxide (alumina) thin films are of interest as inert chemical barriers for various applications. However, the existing literature on the aqueous stability of atomic layer deposited (ALD) amorphous alumina thin films remains incomplete and, in some cases, inconsistent. Because these films have a metastable amorphous structure─which is likely partially hydrated in the as-deposited state─hydration and degradation behavior likely deviate from what is expected for the equilibrium, crystalline Al 2 O 3 phase. Deposition conditions and the aqueous solution composition (ion content) appear to influence the reactivity and stability of amorphous ALD alumina films, but a full understanding of why these alumina films hydrate, solvate, and/or dissolve in near-neutral pH = 7 conditions, for which crystalline Al 2 O 3 is expected to be stable, remains unsolved. In this work, we conduct an extensive X-ray photoelectron spectroscopy investigation of the surface chemistry as a function of water immersion time to reveal the formation of oxyhydroxide (AlOOH), hydroxide (Al(OH) 3 ), and possible carbonate species. We further show that brief postdeposition exposures of these ALD alumina films to an air plasma anneal can significantly enhance the film's stability in near-neutral pH aqueous conditions. The simplicity and effectiveness of this plasma treatment may provide a new alternative to thermal annealing and capping treatments typically used to promote aqueous stability of low-temperature ALD metal oxide barrier layers.