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Tytuł:
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Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.
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Autorzy:
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Han DP; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Iwaya M; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Takeuchi T; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
Kamiyama S; Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan.
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Źródło:
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ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Jun 08; Vol. 14 (22), pp. 26264-26270. Date of Electronic Publication: 2022 May 24.
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Typ publikacji:
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Journal Article
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Język:
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English
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Imprint Name(s):
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Original Publication: Washington, D.C. : American Chemical Society
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Contributed Indexing:
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Keywords: III-nitride; capacitance−voltage characteristics; metalorganic vapor phase epitaxy; pre-TMIn flow treatment; quantum wells; time-resolved photoluminescence
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Entry Date(s):
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Date Created: 20220524 Latest Revision: 20220609
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Update Code:
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20240105
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DOI:
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10.1021/acsami.2c05585
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PMID:
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35609181
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This study aims to improve the emission efficiency of GaInN-based green light-emitting devices (LEDs) using the pre-trimethylindium (TMIn) flow treatment of a quantum well (QW) since we hypothesize that the pre-TMIn flow treatment is able to suppress the incorporation of surface defects (SDs) from the n-type GaN surface into the QWs. For this purpose, first, we investigate the effect of TMIn flow treatment on the SDs in n-type GaN samples by measuring time-resolved photoluminescence. The result of the investigation shows that the TMIn flow treatment effectively deactivated and/or neutralized the SDs from acting as the nonradiative recombination centers. Next, we prepare and investigate the GaInN-based green LEDs employing five pairs of multiple quantum wells (MQWs), in which the number of pre-TMIn treated QWs varies from zero to five. Through the analysis of prepared samples, we demonstrate that the pre-TMIn flow treatment of QWs works effectively in suppressing the SD incorporation into the MQWs, thereby improving the emission intensity.
