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Tytuł pozycji:

Coexistence ofimpurity-induced quasi-one-dimensional electronic structure and topological surface states of Bi2Se3.

Tytuł :
Coexistence ofimpurity-induced quasi-one-dimensional electronic structure and topological surface states of Bi2Se3.
Autorzy :
Shokri, R.
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Temat :
SCANNING tunneling microscopy
ELECTRON transport
ELECTRONIC structure
SURFACE states
VALENCE bands
Źródło :
Journal of Applied Physics; 2016, Vol. 119 Issue 8, p085304-1-085304-7, 7p, 1 Diagram, 3 Graphs
Czasopismo naukowe
Using scanning tunneling spectroscopy (microscopy) (STS, STM) in combination with angleresolved photoelectron spectroscopy (ARPES), we report on the coexistence of the topological surface state with a long range periodic modulation of the electronic structure on the surface of Bi2Se3 at room temperature. The electronic modulation manifests itself as a two-dimensional commensurate superlattice characterized by stripes running parallel to the surface lattice vectors when the near-surface region of samples are doped with trace amounts ofiron or cesium. In both cases, the electronic signature is observed in STM only at energies within the valence band more than 130 meV blow the Dirac point energy (ED). ARPES experiments show the presence ofintact Dirac cone, indicating that the electronic stripes do not influence the Dirac surface states. We suggest that the stripe states are the bulk properties of Bi2Se3 induced by trace amounts of cesium and iron impurities residing in bismuth and selenium substitutional sites and/or in the van-der-Waals gap. [ABSTRACT FROM AUTHOR]
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