Electron paramagnetic resonance spectroscopy is used to investigate the thermal stability of the Aluminum-Zinc vacancy (AlZn-VZn) complex created in bulk single crystalline ZnO by room temperature electron irradiation with an energy of 1.2MeV. Two different stages in the annealing process at 160 and 250 ° C with apparent activation energies of EA1 ± 1.560.2 eV and EA2 = 1.9 ± 0.2 eV, respectively, are observed. The second stage leads to the complete annealing out of the (AlZn-VZn) complex and is accompanied by restoration of the concentration of the AlZn shallow donor centers to its initial value in as-grown (i.e., not irradiated) material. The obtained results prove that the (AlZn-VZn) complex is the dominant acceptor responsible for compensation of n-type-dopants in the studied Al-containing ZnO samples. [ABSTRACT FROM AUTHOR]
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