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Tytuł pozycji:

Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles.

Tytuł :
Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles.
Autorzy :
Timerkaeva, Dilyara
Attaccalite, Claudio
Brenet, Gilles
Caliste, Damien
Pochet, Pascal
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Źródło :
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 8p, 2 Diagrams, 2 Charts, 3 Graphs
Temat :
CARBON-carbon bonds
OPTICAL properties of metals
DENSITY functional theory
PHOTON emission
SILICON crystals
GAMMA rays
Czasopismo naukowe
The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely, the A-, B-, C-, and D-forms. The configurations were studied by density functional theory and many-body perturbation theory. Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon. [ABSTRACT FROM AUTHOR]
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