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Tytuł pozycji:

Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs.

Tytuł :
Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs.
Autorzy :
Ruschel, J.
Glaab, J.
Brendel, M.
Rass, J.
Stölmacker, C.
Lobo-Ploch, N.
Kolbe, T.
Wernicke, T.
Mehnke, F.
Enslin, J.
Einfeldt, S.
Weyers, M.
Kneissl, M.
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Temat :
LIGHT emitting diodes
ELECTRO-optical effects
MAGNETIC control
ELECTROLUMINESCENT devices
ELECTRIC field effects
Źródło :
Journal of Applied Physics; 2018, Vol. 124 Issue 8, pN.PAG-N.PAG, 7p, 1 Diagram, 11 Graphs
Czasopismo naukowe
The degradation behavior of ultraviolet-B light emitting diodes (UV-B LEDs) emitting near 310 nm has been investigated and a method to localize the degradation effects is presented. Measurements of the electro-optical characteristics of UV-B LEDs, during a 200 h constant-current degradation study, showed an initial fast decrease in the optical power accompanied by a decrease in the drive voltage and an increase in the capacitance. Furthermore, by using a specially designed contact geometry, it was possible to separate the degradation of the electrical properties of the p-layers and p-contacts from the degradation of the active region and n-side of the LED heterostructure. Our investigations show that the initial changes in capacitance and voltage can be attributed to changes in the p-side and at the p-contact of the LED, which can be explained by an activation of Mg dopants. [ABSTRACT FROM AUTHOR]
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