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Tytuł pozycji:

Response to “Comment on ‘Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles’” [J. Appl. Phys. 124, 086101 (2018)].

Tytuł :
Response to “Comment on ‘Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles’” [J. Appl. Phys. 124, 086101 (2018)].
Autorzy :
Timerkaeva, Dilyara
Attaccalite, Claudio
Brenet, Gilles
Caliste, Damien
Pochet, Pascal
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Źródło :
Journal of Applied Physics; 2018, Vol. 124 Issue 8, pN.PAG-N.PAG, 2p
Temat :
OPTICAL properties
OPTICS
SILICON
THERMODYNAMICS
DYNAMICS
Czasopismo naukowe
In this reply, we discuss the relative stability of different forms of CiCs complexes. Based on the extended sections of IR absorption spectra reported by Lavrov [J. Appl. Phys. 124, 086101 (2018)] in his comment, we identify that the C form is stabilized transiently in Float-Zone (FZ)-silicon during and just after electron irradiation. For a longer time at room temperature, the C form disappears at the expense of the B form. Nonetheless, the C form was found to be stable up to 280 °C in Czochralski (Cz)-silicon after neutron irradiation [E. N. Sgourou et al., J. Appl. Phys. 113, 113506 (2013)]. We attribute this apparent discrepancy to a vacancy-induced CiCs dissolution mechanism that drives the electron irradiated sample in a non-equilibrium state that differs from the equilibrium state predicted by density functional theory (DFT) calculations [D. Timerkaeva et al., J. Appl. Phys. 123, 161421 (2018)]. In the neutron irradiation experiment, the generated vacancies are trapped by oxygen interstitial allowing the thermodynamics equilibrium to be preserved. [ABSTRACT FROM AUTHOR]
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