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Tytuł pozycji:

Elucidating the origins of the two-dimensional electron gas in LaVO3/SrTiO3 interfaces.

Tytuł :
Elucidating the origins of the two-dimensional electron gas in LaVO3/SrTiO3 interfaces.
Autorzy :
Hu, L.
Wei, R. H.
Tang, X. W.
Zhu, S. J.
Zhang, X. K.
Zhu, X. B.
Song, W. H.
Dai, J. M.
Zhang, C. J.
Sun, Y. P.
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Temat :
ELECTRON gas
INTERFACES (Physical sciences)
STRONTIUM titanate
THIN films
ELECTRIC properties
SUBSTRATES (Materials science)
Źródło :
Journal of Applied Physics; 2019, Vol. 125 Issue 14, pN.PAG-N.PAG, 6p, 5 Graphs
Czasopismo naukowe
The influence of growth rate and substrate temperature on the two-dimensional electron gas (2DEG) of LaVO 3 / SrTiO 3 interfaces has been investigated. It is found that both growth rate and substrate temperature can modulate the structural and electrical properties of the LaVO 3 / SrTiO 3 interfaces through oxygen substrate-to-film transfer. When the LaVO 3 thin films are deposited at a low substrate temperature and a high growth rate, the LaVO 3 / SrTiO 3 interfaces exhibit weak oxygen substrate-to-film transfer and resultant low density of oxygen vacancies in the SrTiO 3 substrate. As a result, the intrinsic effect (polar discontinuity and/or dielectric screening) dominates the interfacial conduction, while the oxygen vacancies play a minor role. In contrast, the oxygen substrate-to-film transfer (oxygen vacancies in the SrTiO 3 substrate) can be enhanced (increased) by depositing the LaVO 3 thin films at lower growth rates and/or higher substrate temperatures. In this case, the contribution of oxygen vacancies to the interfacial conduction would prevail over the intrinsic effect. Our results elucidate the origins of 2DEG in the LaVO 3 / SrTiO 3 interfaces and may also be important for other SrTiO 3 -based heterointerfaces. [ABSTRACT FROM AUTHOR]
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