Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Tytuł pozycji:

Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion.

Tytuł:
Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion.
Autorzy:
Del Gaudio, D.
Boone, C. T.
Sallans, K.
Mason, E.
Williamson, A. J.
Yarlagadda, S.
Turkulets, Y.
Heron, J. T.
Shalish, I.
Goldman, R. S.
Temat:
INDIUM tin oxide
PULSED laser deposition
OXIDES
INDIUM
Źródło:
Journal of Applied Physics; 11/14/2019, Vol. 126 Issue 18, pN.PAG-N.PAG, 5p, 1 Diagram, 1 Chart, 2 Graphs
Czasopismo naukowe
Complex oxides such as tin-doped indium oxide (ITO) are widely utilized as transparent conductors in a variety of functional devices. Typically, they are fabricated by sputtering, which often requires additional annealing to achieve high transparency and conductivity. Using pulsed laser deposition (PLD), both high transparency and high conductivity have been achieved without annealing, using instead selected gas species and pressures. However, the relative roles of Stranski-Krastanov-like and vapor-liquid-solid (VLS) growth modes during morphological transitions remain controversial. Here, we report on PLD of ITO in an inert-gas environment, identifying the role of plasma-plume expansion in the selection of VLS vs vapor-solid (VS) growth. For the lowest N2 pressure, indium-tin droplet formation, followed by self-catalyzed VLS growth, is observed. With increasing N2 pressure, a transition from VLS to VS growth is apparent. It is hypothesized that oxygen scattering at the lowest N2 pressure induces a metal-rich plume, which leads to metal droplet formation, followed by VLS growth. As the N2 pressure is increased, the plasma-plume and its metal-rich core are compressed, resulting in a transition to VS growth. This tunable compression of the plasma-plume offers a route to the morphological design of a wide range of functional complex oxide devices with tunable optical and electronic performance. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies