Process-induced defects in Au-hyperdoped Si photodiodes.

Hyperdoped Si formed by implantation followed by pulsed laser melting is a promising material for enhanced near-infrared photodetection. To realize the full potential of this material, it is crucial to understand the nature of defects arising from the fabrication process and how these may impact device operation. Here, we identify through deep level transient spectroscopy the presence of a range of defects in the substrate depletion layer that arise from interactions between high dose ion implantation and pulsed laser melting, and investigate their annealing behavior up to 650 ° C. In particular, the detection of a vacancy complex E 1 (0.35) with densities as high as 10 14 cm − 3 indicates that optical transitions between this level and the valence band may compete with the Au donor center, and hence could potentially contribute to the photocurrent in hyperdoped photodiodes. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Applied Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)