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Tytuł pozycji:

Switch effect for spin-valley electrons in monolayer WSe2 structures subjected to optical field and Fermi velocity barrier.

Tytuł:
Switch effect for spin-valley electrons in monolayer WSe2 structures subjected to optical field and Fermi velocity barrier.
Autorzy:
Hao, X.-J.
Yuan, R.-Y.
Ji, T.
Guo, Y.
Temat:
ELECTRON spin
VELOCITY
POLARIZED electrons
ELECTRONS
SPIN polarization
MONOMOLECULAR films
Źródło:
Journal of Applied Physics; 10/21/2020, Vol. 128 Issue 15, p1-11, 11p
Czasopismo naukowe
To investigate the effects of the optical field and the Fermi velocity on the transport properties of spin and valley electrons, we impose a normal/ferromagnetic/normal (N/F/N) quantum structure based on the monolayer WSe 2. The results indicate that there is a strong switch effect for spin- and valley-related electrons. When left-handed off-resonant circularly polarized light is irradiated in the intermediate ferromagnetic region, 100 % polarization for K valley electrons can be achieved in the entire effective energy spectrum of the optical field. Meanwhile, 100 % polarization of the K ′ valley can also be gained with the right-handed off-resonant circularly polarized light in the junction. Moreover, the perfect polarization of spin-up electrons can be obtained when the ferromagnetic exchange field is applied to the structure. Additionally, the Fermi velocity barrier also changes the energy band of the studied material, which makes the spin and valley transport increase with the increase of the velocity barrier but does not produce spin or valley polarizations. These interesting results clarify that the optical field and the Fermi velocity both make a contribution to the modulation of spin electrons for the two valleys and provide a useful method for the design of novel spintronic and valleytronic devices. [ABSTRACT FROM AUTHOR]
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