The number of interface traps (${N}_{\textit {it}}$) in a gate-all-around (GAA) MOSFET that harnesses an inherent floating body, was analyzed by using the synchronized optical charge pumping (SOCP) technique. By synchronizing control timing between the MOSFET operation and optical stimulation by light, holes generated by light illumination dominantly vanished, due to surface recombination with interface traps, rather than bulk recombination in a silicon nanowire and source/drain back-diffusion. This SOCP characterized the ${N}_{\textit {it}}$ without the aid of any additional specified test structure. To demonstrate an application, the amount of interface traps originating from off-state stress was quantitatively extracted by the SOCP. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
