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Tytuł pozycji:

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.

Tytuł :
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.
Autorzy :
Mukherjee, Kalparupa
De Santi, Carlo
Borga, Matteo
You, Shuzhen
Geens, Karen
Bakeroot, Benoit
Decoutere, Stefaan
Meneghesso, Gaudenzio
Zanoni, Enrico
Meneghini, Matteo
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Temat :
METAL oxide semiconductor field-effect transistors
BREAKDOWN voltage
DIELECTRIC devices
RELIABILITY in engineering
TRENCHES
ELECTRIC fields
GATES
Źródło :
Materials (1996-1944); 11/1/2020, Vol. 13 Issue 21, p4740-4740, 1p
Czasopismo naukowe
We propose to use a bilayer insulator (2.5 nm Al2O3 + 35 nm SiO2) as an alternative to a conventional uni-layer Al2O3 (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. We demonstrate that devices with the bilayer dielectric present superior reliability characteristics than those with the uni-layer, including: (i) gate leakage two-orders of magnitude lower; (ii) 11 V higher off-state drain breakdown voltage; and (iii) 18 V higher gate-source breakdown voltage. From Weibull slope extractions, the uni-layer shows an extrinsic failure, while the bilayer presents a wear-out mechanism. Extended reliability tests investigate the degradation process, and hot-spots are identified through electroluminescence microscopy. TCAD simulations, in good agreement with measurements, reflect electric field distribution near breakdown for gate and drain stresses, demonstrating a higher electric field during positive gate stress. Furthermore, DC capability of the bilayer and unilayer insulators are found to be comparable for same bias points. Finally, comparison of trapping processes through double pulsed and Vth transient methods confirms that the Vth shifts are similar, despite the additional interface present in the bilayer devices. [ABSTRACT FROM AUTHOR]
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