A modified cross-coupling low-triggering dual-polarity silicon controlled rectifier (m-CLTdSCR) for on-chip electrostatic discharge (ESD) protection is developed. Cross-coupling mechanism can effectively reduce the trigger voltage of the proposed structure. A lower leakage is achieved by replacing NMOS with PMOS and changed connection, and this also effectively reduces the parasitic capacitance of m-CLTdSCR between anode and cathode. The new structure shows low-triggering voltage ~3.46 V, low leakage ~0.46 nA under normal operation condition, and low parasitic capacitance ~190 fF at zero bias. As such, the proposed m-CLTdSCR is an attractive device for radio frequency integrated circuits (RFICs) ESD protection. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)