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Tytuł pozycji:

Direct Visualization of Breakdown-Induced Metal Migration in Enhanced Modified Lateral Silicon-Controlled Rectifiers.

Tytuł:
Direct Visualization of Breakdown-Induced Metal Migration in Enhanced Modified Lateral Silicon-Controlled Rectifiers.
Autorzy:
Chen, Xinqian
Du, Feibo
Wang, Chaolun
Xu, Hejun
Zhang, Yuxin
Hou, Fei
Yang, Xin
Wu, Yongren
Tsai, Chihang
Chen, Zhirong
Guo, Yurou
Liu, Zhiwei
Wu, Xing
Temat:
SILICON-controlled rectifiers
ELECTROSTATIC discharges
FAILURE analysis
METAL fibers
TRANSMISSION electron microscopy
Źródło:
IEEE Transactions on Electron Devices; Mar2021, Vol. 68 Issue 3, p1378-1381, 4p
Czasopismo naukowe
The robustness of electrostatic sensitive devices is important in state-of-the-art silicon technology. However, the electrical breakdown-induced microstructure evolution remains unclear. In this work, we performed the physical failure analysis of breakdown in an enhanced modified lateral silicon-controlled rectifier-based electrostatic discharge (ESD) device. Direct visualization of the conductive metal filaments in the doped silicon substrate has been achieved by high-resolution transmission electron microscopy. The locations of these metal filaments induced by breakdown are found near the cathode. The evolution of these microstructural changes and chemical properties provides guide to the failure analysis of ESD devices. [ABSTRACT FROM AUTHOR]
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