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Title of the item:

Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs.

Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs.
Jabli, F.
Dhouibi, S.
Gassoumi, M.
Subject Terms:
MODULATION-doped field-effect transistors
METAL semiconductor field-effect transistors
GALLIUM nitride
Semiconductors; Mar2021, Vol. 55 Issue 3, p379-383, 5p
Academic Journal
Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO2|SiN is investigated. Capacitance-voltage at various temperatures (C–V–T), a drain current–voltage at various gate voltages (Ids–Vds–Vgs), the gate leakage current with various temperatures (Igs–Vgs–T), and the maximum extrinsic transconductance Gmax are measured; all of these measurements show the impact of SiO2|SiN passivation on the performances of AlGaN|GaN|Si HEMTs. [ABSTRACT FROM AUTHOR]
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