A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD.

The possibility of fabricating heavily doped (Na – Nd≥1×1019cm–3)p+-4H-SiC layers on CVD-grown lightly doped n-4H-SiC layers by sublimation epitaxy has been demonstrated. It is shown that a Au/Pd/Ti/Pd contact, which combines a low specific contact resistance (∼2×10–5Ωcm2) with high thermal stability (up to 700°C), is the optimal contact to p-4H-SiC. The p–n structures obtained are used to fabricate packaged diodes with a breakdown voltage of up to 1400 V. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]
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