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Tytuł:
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Proton-Induced Damage in Gallium Nitride-Based Schottky Diodes.
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Autorzy:
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Karmarkar, Aditya P.
White, Brad D.
Buttari, Dario
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Weller, Robert A.
Brilison, Leonard J.
Mishra, Umesh K.
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Temat:
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METAL semiconductor field-effect transistors
PROTONS
EFFECT of radiation on power transistors
GALLIUM nitride
ENERGY dissipation
CRYSTAL lattices
MATHEMATICAL crystallography
LATTICE theory
RADIATION
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Źródło:
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IEEE Transactions on Nuclear Science; Dec2005 Part 1, Vol. 52 Issue 6, p2239-2244, 6p
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Proton irradiation decreases the doping concentration and increases the ideality factor and series resistance, but has very little effect on the Schottky barrier height in n-Gallium nitride Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher nonionizing energy loss. The displacement damage recovers during annealing. Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation. [ABSTRACT FROM AUTHOR]
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