Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric.

Lanthanum lutetium oxide thin films were grown on (100) Si by pulsed laser deposition. Rutherford backscattering spectrometry, atomic force microscopy, x-ray diffraction, and x-ray reflectometry were employed to investigate the samples. The results indicate the growth of stoichiometric and smooth LaLuO3 films that remain amorphous up to 1000 °C. Internal photoemission and photoconductivity measurements show a band gap width of 5.2±0.1 eV and symmetrical conduction and valence band offsets of 2.1 eV. Capacitance and leakage current measurements reveal C-V curves with a small hysteresis, a dielectric constant of ≈32, and low leakage current density levels. [ABSTRACT FROM AUTHOR]
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