Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO[sub 2] gate dielectric.

Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO[sub 2] gate dielectric with equivalent oxide thickness (EOT) less than 20 Å was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics Letters is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)