Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film.
ZINC oxide thin films
THIN films -- Design & construction
METAL organic chemical vapor deposition
Applied Physics Letters; 12/12/2011, Vol. 99 Issue 24, p242105, 4p, 4 Graphs
An ultraviolet photodetector was fabricated on MgZnO thin film grown by metal-organic chemical vapor deposition. The peak response of the device centers at 238 nm and cutoff wavelength is 253 nm. The peak responsivity is 129 mA/W at 15 V bias, and the UV/visible reject ratio is 4 orders of magnitude. Internal gain is due to the hole trapping at interface that brings low response speed. Native defects at the Au/MgZnO interface degrade the barrier effect, which caused large dark current and high visible response. [ABSTRACT FROM AUTHOR]
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