Tytuł pozycji:
Publisher's Note: 'Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission' [Appl. Phys. Lett. 101, 202402 (2012)].
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Tytuł:
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Publisher's Note: 'Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission' [Appl. Phys. Lett. 101, 202402 (2012)].
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Autorzy:
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Greer, A. A.
Gray, A. X.
Kanai, S.
Kaiser, A. M.
Ueda, S.
Yamashita, Y.
Bordel, C.
Palsson, G.
Maejima, N.
Yang, S.-H.
Conti, G.
Kobayashi, K.
Ikeda, S.
Matsukura, F.
Ohno, H.
Schneider, C. M.
Kortright, J. B.
Hellman, F.
Fadley, C. S.
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Temat:
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SEMICONDUCTOR doping
PHOTOELECTRICITY
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Źródło:
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Applied Physics Letters; 1/7/2013, Vol. 102 Issue 1, p019901-019901-1, 1p
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A correction to the article "Observation of boron diffusion in an annealed Ta/CoFeB/ MgO magnetic tunnel junction with standing-wave hard x-ray photoemission" that was published in a previous iisue is presented.
