Electronic Properties of Armchair Black Phosphorene Nanoribbons Edge-Modified by Transition Elements V, Cr, and Mn

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Tytuł:: Electronic Properties of Armchair Black Phosphorene Nanoribbons Edge-Modified by Transition Elements V, Cr, and Mn
Autorzy:: Jiong-Hua Huang
Xue-Feng Wang
Yu-Shen Liu
Li-Ping Zhou
Temat:: Black phosphorene nanoribbons
Half semiconductor
Spin diode
Semiconductor-metal transition
Edge functionalization
Materials of engineering and construction. Mechanics of materials
TA401-492
Źródło:: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-11 (2019)
Wydawca:: SpringerOpen, 2019.
Rok publikacji:: 2019
Kolekcja:: LCC:Materials of engineering and construction. Mechanics of materials
Typ dokumentu:: article
Opis pliku:: electronic resource
Język:: English
ISSN:: 1931-7573
1556-276X
Relacje:: http://link.springer.com/article/10.1186/s11671-019-2971-5; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X
DOI:: 10.1186/s11671-019-2971-5
Dostęp URL:: https://doaj.org/article/665c0d01894c44ed9fcab85cab144176 Link otwiera się w nowym oknie
Numer akcesji:: edsdoj.665c0d01894c44ed9fcab85cab144176
: Czasopismo naukowe

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Abstract The structural, electrical, and magnetic properties of armchair black phosphorene nanoribbons (APNRs) edge-functionalized by transitional metal (TM) elements V, Cr, and Mn were studied by the density functional theory combined with the non-equilibrium Green’s function. Spin-polarized edge states introduce great varieties to the electronic structures of TM-APNRs. For APNRs with Mn-stitched edge, their band structures exhibit half-semiconductor electrical properties in the ferromagnetic state. A transverse electric field can then make the Mn-APNRs metallic by shifting the conduction bands of edge states via the Stark effect. The Mn/Cr-APNR heterojunction may be used to fabricate spin p-n diode where strong rectification acts only on one spin.

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