High Sensitivity Ultraviolet Light Off-Stoichiometric Silicon Oxide-Based Sensors

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Tytuł:: High Sensitivity Ultraviolet Light Off-Stoichiometric Silicon Oxide-Based Sensors
Autorzy:: Jesús Carrillo
José Alberto Luna
Godofredo García
Héctor Juárez
Temat:: Silicon Rich Oxide
UV detectors
Si nanocrystals
solar cell-like structure
General Works
Źródło:: Proceedings, Vol 1, Iss 4, p 382 (2017)
Wydawca:: MDPI AG, 2017.
Rok publikacji:: 2017
Kolekcja:: LCC:General Works
Typ dokumentu:: article
Opis pliku:: electronic resource
Język:: English
ISSN:: 2504-3900
44049390
Relacje:: https://www.mdpi.com/2504-3900/1/4/382; https://doaj.org/toc/2504-3900
DOI:: 10.3390/proceedings1040382
Dostęp URL:: https://doaj.org/article/fdf573b5e7eb440493904370c840d17d Link otwiera się w nowym oknie
Numer akcesji:: edsdoj.fdf573b5e7eb440493904370c840d17d
: Czasopismo naukowe

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We have developed a UV silicon detector made of silicon and off-stoichiometric silicon dioxide that shows high efficiency and is completely compatible with silicon devices technology. The silicon-based UV detector present a solar cell-like structure which does not require any voltage source. In addition, an off-stoichiometric silicon dioxide film (Silicon Rich Oxide) with silicon nanocrystals has been integrated to this structure. It is shown that the spectral response is due to the high photoluminescence of Si nanocrystals in the visible region when illuminated with UV light and an increase of 100% in the UV detector efficiency is observed with respect to conventional silicon dioxide layers.

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