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Title of the item:

Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT

Title :
Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT
Authors :
Ghosh, Sneha
Mondal, Anindita
Kar, Mousiki
Kundu, Atanu
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Source :
Silicon. :1-11
Academic Journal

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