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Title of the item:

Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications

Title :
Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications
Authors :
Mondal, Arnab
Roy, Akash
Mitra, Rajrup
Kundu, Atanu
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Source :
Silicon. 12(9):2251-2257
Academic Journal

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