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Title of the item:

Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs

Title:
Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs
Authors:
Jabli, F.Aff1, Aff2
Dhouibi, S.Aff3, Aff5
Gassoumi, M.Aff2, Aff4
Source:
Semiconductors. 55(3):379-383
Academic Journal
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