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Title of the item:

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Title :
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
Authors :
Lee, Hsin-Ying
Chang, Ting-Wei
Lee, Ching-TingAff1, Aff2, Aff3
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Source :
Journal of Electronic Materials. 50(6):3748-3753
Academic Journal

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