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Tytuł pozycji:

The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy

Tytuł :
The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy
Współwytwórcy :
Thomas, A [Sektion Physik der TU Dresden (Germany)]
Temat :
36 MATERIALS SCIENCE CADMIUM SULFIDES
CRYSTAL GROWTH
CHEMICAL REACTIONS
CUBIC LATTICES
ELECTRON DIFFRACTION
INDIUM PHOSPHIDES
INDIUM SULFIDES
INTERFACES
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
PHOTOLUMINESCENCE
RAMAN SPECTROSCOPY
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
CADMIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
EMISSION
EPITAXY
INDIUM COMPOUNDS
INORGANIC PHOSPHORS
LASER SPECTROSCOPY
LUMINESCENCE
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
SECONDARY EMISSION
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
TEMPERATURE RANGE 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2206-2211
Dostęp URL :
http://www.osti.gov/scitech/biblio/7115803
Konferencja
CdS was deposited onto clean cleaved InP(110) by molecular beam epitaxy (MBE) using a growth rate of 0.2 monolayers/min and a substrate temperature of 440 K (510 K). Raman spectra were taken in situ of the clean InP surface and after each evaporation step using an Ar{sup +} ion laser as a light source. Due to this resonant excitation scattering signals originating from the CdS deposition are observed at coverages as low as 2 monolayers (ML). The number of phonon peaks observed and their selection rules reveal that the cubic modification is present. The spectra are dominated at all coverages by the longitudinal optical (LO) and 2LO phonon scattering intensities and the variation of the 2LO/LO intensity ratio with CdS deposition indicates changes in the electronic structure of the growing CdS. Another spectral feature in the Raman spectra is attributed to a chemically reacted layer at the interface most likely consisting of an In-S compound. The intensity of this feature is found to depend critically on the growth parameters, in particular the substrate temperature, but also on the operating time of the MBE cell. The amount of reaction at the interface also influences the critical CdS film thickness and the development of the 2LO/LO ratio. The results are discussed taking complementary photoluminescence, x-ray diffraction, and photoemission data into account.

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