Author: "Altukhov, I. V." - OpacWWW

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Title:: Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains
Authors:: Altukhov, I. V.
Dizhur, S. E.Aff1, IDS1064226921440017_cor2
Kagan, M. S.
Khvalkovskiy, N. A.
Paprotskiy, S. K.
Vasil’evskii, I. S.
Vinichenko, A. N.; Show more
Source:: Journal of Communications Technology and Electronics. 66(12):1385-1387

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Title:: Electronic Transport in InAs/AlSb Superlattices with Electric Domains
Authors:: Altukhov, I. V.
Dizhur, S. E.
Kagan, M. S.Aff1, IDS1064226922070026_cor3
Paprotskiy, S. K.
Khvalkovskiy, N. A.
Il’inskaya, N. D.
Usikova, A. A.
Baranov, A. N.
Teissier, R.; Show more
Source:: Journal of Communications Technology and Electronics. 67(7):882-883

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Title:: The Frenkel–Poole Effect in the Ionization of an Acceptor Impurity of Boron in Diamond in a Strong Electric Field
Authors:: Altukhov, I. V.
Kagan, M. S.
Paprotskii, S. K.
Khvalkovskii, N. A.
Rodionov, N. B.
Bolshakov, A. P.
Ralchenko, V. G.
Khmelnitskii, R. A.; Show more
Source:: Journal of Communications Technology and Electronics. 65(11):1336-1338

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Title:: Features of Tunneling Current in Superlattices with Electrical Domains
Authors:: Paprotskiy, S. K.
Altukhov, I. V.
Kagan, M. S.
Khval’kovskiy, N. A.
Kohn, I. A.
Il’inskaya, N. D.
Usikova, A. A.
Baranov, A. N.
Teissier, R.; Show more
Source:: Journal of Communications Technology and Electronics. 64(10):1140-1143

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Title:: Diamond Diode Structures Based on Homoepitaxial Films
Authors:: Rodionov, N. B.
Pal’, A. F.
Bol’shakov, A. P.
Ral’chenko, V. G.
Khmel’nitskiy, R. A.
Dravin, V. A.
Malykhin, S. A.
Altukhov, I. V.
Kagan, M. S.
Paprotskiy, S. K.; Show more
Source:: Journal of Communications Technology and Electronics. 63(7):828-834

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Title:: Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains
Authors:: Altukhov, I. V.
Dizhur, S. E.
Kagan, M. S.
Khvalkovskiy, N. A.
Paprotskiy, S. K.
Vasil’evskii, I. S.
Vinichenko, A. N.; Show more
Source:: Semiconductors. 52(4):473-477

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Title:: Electrical instability against thermal injection in multibarrier heterostructures: Theoretical model and experimental data
Authors:: Gergel’, V. A.
Altukhov, I. V.
Verkhovtseva, A. V.
Galiev, G. B.
Gorshkova, N. M.
Zelenyi, A. P.
Il’ichev, E. A.
Minkin, V. S.
Paprotskii, S. K.; Show more
Source:: Technical Physics. July 2015 60(7):1027-1030

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Title:: Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices
Authors:: Altukhov, I. V.
Dizhur, S. E.
Kagan, M. S.
Paprotskiy, S. K.
Khval’kovskii, N. A.
Buravlev, A. D.
Vasil’ev, A. P.
Zadiranov, Yu. M.
Il’inskaya, N. D.
Usikova, A. A.
Ustinov, V. M.; Show more
Source:: JETP Letters: JETP Letters. January 2016 103(2):122-124

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Title:: Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers
Authors:: Gergel, V. A.
Altukhov, I. V.
Verkhovtseva, A. V.
Galiev, G. G.
Gorshkova, N. M.
Zhigaltsov, S. S.
Zelenyi, A. P.
Il’ichev, E. A.
Minkin, V. S.
Paprotskij, S. K.
Yakupov, M. N.; Show more
Source:: Semiconductors. April 2014 48(4):465-470

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Title:: Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices
Authors:: Kagan, M. S.
Altukhov, I. V.
Baranov, A. N.
Il’inskaya, N. D.
Paprotskiy, S. K.
Teissier, R.
Usikova, A. A.; Show more
Source:: Semiconductors. November 2013 47(11):1478-1480

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Title:: Induced Radiative Transitions between Strain-Split Acceptor Levels in Germanium at Strong Electric Field
Authors:: Altukhov, I. V.
Chirkova, E. G.
Kagan, M. S.
Korolev, K. A.
Sinis, V. P.; Show more
Source:: Hot Carriers in Semiconductors. :635-637

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Title:: Hot-Hole Streaming in Uniaxially Compressed Germanium
Authors:: Altukhov, I. V.
Kagan, M. S.
Korolev, K. A.
Sinis, V. P.; Show more
Source:: Hot Carriers in Semiconductors. :465-467

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Title:: Specific features of the electrooptical effect and light scattering of water dispersed system of carbon nanotubes
Authors:: Voitylov, V. V.
Ivashchenko, P. I.
Trusov, A. A.
Altukhov, I. V.; Show more
Source:: Optics and Spectroscopy. November 2009 107(5):717-720

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Title:: Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium
Authors:: Altukhov, I. V.
Kagan, M. S.
Korolev, K. A.
Sinis, V. P.
Chirkova, E. G.
Odnoblyudov, M. A.
Yassievich, I. N.; Show more
Source:: Journal of Experimental and Theoretical Physics. January 1999 88(1):51-57

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Title:: Spontaneous and stimulated emission of radiation from hot holes from uniaxially stressed germanium
Authors:: Altukhov, I. V.
Kagan, M. S.
Sinis, V. P.; Show more
Source:: Optical and Quantum Electronics. January 1991 23(2):S211-S216

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Title:: NON-RESONANT TUNNELLING IN SHORT-PERIOD SUPERLATTICES WITH OPTICAL CAVITIES.
Authors:: Kagan, M. S.
Altukhov, I. V.
Paprotskiy, S. K.
Baranov, A. N.
Teissier, R.
Il'inskaya, N. D.
Usikova, A. A.
Buravlev, A. D.
Ustinov, V. M.; Show more
Alternate Title:: NEREZONANSINIS TUNELIAVIMAS TRUMPO PERIODO SUPERGARDELĖSE SU OPTINIAIS REZONATORIAIS.
Source:: Lithuanian Journal of Physics. 2014, Vol. 54 Issue 1, p50-53. 4p.

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Title:: Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures.
Authors:: Kagan, M. S.
Altukhov, I. V.
Sinis, V. P.
Paprotskiy, S. K.
Yassievich, I. N.
Kolodzey, J.; Show more
Source:: Physica Status Solidi (B); Jan2007, Vol. 244 Issue 1, p192-196, 5p

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Title:: THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures.
Authors:: Kagan, M. S.
Altukhov, I. V.
Chirkova, E. G.
Sinis, V. P.
Troeger, R. T.
Ray, S. K.
Kolodzey, J.; Show more
Source:: Physica Status Solidi (B); Feb2003, Vol. 235 Issue 2, p293-296, 4p

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Title:: THz lasing of SiGe/Si quantum-well structures due to shallow acceptors.
Authors:: Kagan, M. S.
Altukhov, I. V.
Chirkova, E. G.
Sinis, V. P.
Troeger, R. T.
Ray, S. K.
Kolodzey, J.; Show more
Source:: Physica Status Solidi (B); Jan2003, Vol. 235 Issue 1, p135-138, 4p

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Title:: Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.
Authors:: Kagan, M. S.
Altukhov, I. V.
Korolev, K. A.
Orlov, D. V.
Sinis, V. P.
Thomas, S. G.
Wang, K. L.
Yassievich, I. N.; Show more
Source:: Physica Status Solidi (B); Jan1999, Vol. 211 Issue 1, p495-499, 5p

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