- Tytuł:
- 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications
- Autorzy:
- Źródło:
- In Materials Science & Engineering B March 2024 301
Czasopismo naukowe