- Tytuł:
- Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.
- Autorzy:
- Temat:
-
EPITAXIAL layers
STIMULATED emission
MOLECULAR beam epitaxy
INDIUM
BUFFER layers
NITROGEN plasmas
MOLECULAR spectra - Źródło:
- Semiconductors; Oct2019, Vol. 53 Issue 10, p1357-1362, 6p
Czasopismo naukowe