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Wyszukujesz frazę ""CRYSTAL lattices"" wg kryterium: Temat


Tytuł :
Stability and interdiffusion of short-period Si/Ge strained layer superlattices
Współwytwórcy :
Abstreiter, G [Walter Schottky Inst. der TU Muenchen, Garching (Germany)]
Temat :
36 MATERIALS SCIENCE GERMANIUM
CRYSTAL LATTICES
SILICON
ANNEALING
DIFFUSION
DOPED MATERIALS
RAMAN SPECTROSCOPY
STABILITY
STRAINS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
LASER SPECTROSCOPY
MATERIALS
METALS
SEMIMETALS
SPECTROSCOPY 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 37. national American Vacuum Society symposium, Toronto (Canada), 8-12 Oct 1990
Materiał oryginalny :
CONF-901035--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2045-2047
Dostęp URL :
http://www.osti.gov/scitech/biblio/7306059
Konferencja
Tytuł :
Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditions
Współwytwórcy :
Harbison, J [Bellcore, Red Bank, NJ (United States)]
Temat :
36 MATERIALS SCIENCE ALUMINIUM ARSENIDES
EMISSION SPECTROSCOPY
MOLECULAR BEAM EPITAXY
GALLIUM ARSENIDES
CRYSTAL LATTICES
DIMERS
ELECTRONIC STRUCTURE
OPTICAL SPECTROMETERS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
EPITAXY
GALLIUM COMPOUNDS
MEASURING INSTRUMENTS
PNICTIDES
SPECTROMETERS
SPECTROSCOPY 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2263-2267
Dostęp URL :
http://www.osti.gov/scitech/biblio/7306039
Konferencja
Tytuł :
Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy
Współwytwórcy :
McGill, T [California Inst. of Tech., Pasadena (United States)]
Temat :
36 MATERIALS SCIENCE CADMIUM SELENIDES
ELECTRONIC STRUCTURE
X-RAY SPECTROSCOPY
ZINC TELLURIDES
COORDINATION NUMBER
CRYSTAL LATTICES
CUBIC LATTICES
DOPED MATERIALS
ELECTRON DIFFRACTION
GRADED BAND GAPS
LIGHT EMITTING DIODES
N-TYPE CONDUCTORS
SEMICONDUCTOR JUNCTIONS
VALENCE
CADMIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
JUNCTIONS
MATERIALS
SCATTERING
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS 360606* -- Other Materials-- Physical Properties-- (1992-)
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2233-2237
Dostęp URL :
http://www.osti.gov/scitech/biblio/7305814
Konferencja
Tytuł :
Electron microscopy study of microvoid generation in molecular-beam epitaxy-grown silicon
Współwytwórcy :
Houghton, D [Inst. for Microstructural Sciences, Ottawa, Ontario (Canada)]
Temat :
36 MATERIALS SCIENCE SILICON
ELECTRON MICROSCOPY
MOLECULAR BEAM EPITAXY
AMORPHOUS STATE
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL LATTICES
MORPHOLOGY
CRYSTAL STRUCTURE
ELEMENTS
EPITAXY
MICROSCOPY
SEMIMETALS 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 37. national American Vacuum Society symposium, Toronto (Canada), 8-12 Oct 1990
Materiał oryginalny :
CONF-901035--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2034-2038
Dostęp URL :
http://www.osti.gov/scitech/biblio/7237819
Konferencja
Tytuł :
Quantum devices using SiGe/Si heterostructures
Współwytwórcy :
Wang, K [Univ. of California, Los Angeles (United States)]
Temat :
36 MATERIALS SCIENCE GERMANIUM
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
SILICON
SILICON COMPOUNDS
CRYSTAL LATTICES
INTEGRATED CIRCUITS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR DEVICES
STARK EFFECT
STRAINS
TUNNELING
CRYSTAL STRUCTURE
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
METALS
MICROELECTRONIC CIRCUITS
PHYSICAL PROPERTIES
SEMIMETALS 360606* -- Other Materials-- Physical Properties-- (1992-)
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 37. national American Vacuum Society symposium, Toronto (Canada), 8-12 Oct 1990
Materiał oryginalny :
CONF-901035--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2064-2071
Dostęp URL :
http://www.osti.gov/scitech/biblio/7237670
Konferencja
Tytuł :
Schottky barrier heights for GaAs diodes fabricated at low temperatures
Współwytwórcy :
Williams, R [Univ. of Wales, Cardiff (United Kingdom)]
Temat :
36 MATERIALS SCIENCE GALLIUM ARSENIDES
SCHOTTKY EFFECT
SCHOTTKY BARRIER DIODES
FABRICATION
CRYSTAL LATTICES
DEPLETION LAYER
DOPED MATERIALS
ELECTRICAL PROPERTIES
METALS
MOLECULAR BEAM EPITAXY
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LAYERS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TEMPERATURE RANGE 360606* -- Other Materials-- Physical Properties-- (1992-)
360601 -- Other Materials-- Preparation & Manufacture
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2118-2121
Dostęp URL :
http://www.osti.gov/scitech/biblio/7237656
Konferencja
Tytuł :
Surface reconstructions and surface energies of monolayer-coverage cation-terminated Ga sub 0. 5 In sub 0. 5 P(001) surfaces
Współwytwórcy :
Zunger, A [Solar Energy Research Inst., Golden, CO (United States)]
Temat :
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE GALLIUM PHOSPHIDES
DIMERIZATION
ELECTRONIC STRUCTURE
INDIUM PHOSPHIDES
BUCKLING
CRYSTAL LATTICES
INSTABILITY
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POLYMERIZATION 400201* -- Chemical & Physicochemical Properties
360606 -- Other Materials-- Physical Properties-- (1992-)
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2176-2181
Dostęp URL :
http://www.osti.gov/scitech/biblio/7237532
Konferencja
Tytuł :
Fine structure in superconducting and other alloys, studied by electron microprobe analysis. [As--Pd, Au--Ba, Rh--Zr]
Współwytwórcy :
Matthias, B
Temat :
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ARSENIC ALLOYS
FINE STRUCTURE
PALLADIUM ALLOYS
BARIUM ALLOYS
GOLD ALLOYS
RHODIUM ALLOYS
ZIRCONIUM ALLOYS
PLATINUM ALLOYS
BETA-W LATTICES
PHASE STUDIES
ALLOYS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
PLATINUM METAL ALLOYS 360102* -- Metals & Alloys-- Structure & Phase Studies
656102 -- Solid State Physics-- Superconductivity-- Acoustic, Electronic, Magnetic, Optical, & Thermal Phenomena-- (-1987)
Źródło :
Conference: 2. national meeting of the Society for Applied Spectroscopy, San Diego, CA, USA, Oct 1963; Other Information: Conference paper
Materiał oryginalny :
CONF-313-4
Opis pliku :
Medium: X; Size: Pages: 3
Dostęp URL :
http://www.osti.gov/scitech/biblio/5032425
Książka
Tytuł :
An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces
Współwytwórcy :
Otsuka, N [Purdue Univ., West Lafayette, IN (United States)]
Temat :
36 MATERIALS SCIENCE CADMIUM TELLURIDES
BINDING ENERGY
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
ZINC SELENIDES
CRYSTAL LATTICES
GALLIUM SELENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
X-RAY SPECTROSCOPY
ZINC SULFIDES
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL STRUCTURE
ENERGY
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INORGANIC PHOSPHORS
PHOSPHORS
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2171-2175
Dostęp URL :
http://www.osti.gov/scitech/biblio/7115811
Konferencja
Tytuł :
The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy
Współwytwórcy :
Thomas, A [Sektion Physik der TU Dresden (Germany)]
Temat :
36 MATERIALS SCIENCE CADMIUM SULFIDES
CRYSTAL GROWTH
CHEMICAL REACTIONS
CUBIC LATTICES
ELECTRON DIFFRACTION
INDIUM PHOSPHIDES
INDIUM SULFIDES
INTERFACES
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
PHOTOLUMINESCENCE
RAMAN SPECTROSCOPY
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
CADMIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
EMISSION
EPITAXY
INDIUM COMPOUNDS
INORGANIC PHOSPHORS
LASER SPECTROSCOPY
LUMINESCENCE
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
SECONDARY EMISSION
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
TEMPERATURE RANGE 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2206-2211
Dostęp URL :
http://www.osti.gov/scitech/biblio/7115803
Konferencja
Tytuł :
Arsenic coverage dependence of the angular distribution of secondary ions desorbed from the GaAs(001)(2 times 4) surface
Współwytwórcy :
Winograd, N [Pennsylvania State Univ., University Park (United States)]
Temat :
36 MATERIALS SCIENCE GALLIUM ARSENIDES
CRYSTAL STRUCTURE
ANGULAR DISTRIBUTION
ANISOTROPY
ARSENIC
CRYSTAL LATTICES
CRYSTAL MODELS
DIMERS
GALLIUM IONS
MOLECULAR BEAM EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
DISTRIBUTION
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
IONS
MATHEMATICAL MODELS
PNICTIDES
SEMIMETALS 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2268-2276
Dostęp URL :
http://www.osti.gov/scitech/biblio/7115799
Konferencja
Tytuł :
The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)
Współwytwórcy :
Norris, C [Univ. of Leicester (United Kingdom)]
Temat :
36 MATERIALS SCIENCE ANTIMONY
METALLURGICAL EFFECTS
GERMANIUM
STRESS RELAXATION
SILICON
CRYSTAL LATTICES
MORPHOLOGY
REFLECTIVITY
SPECTRAL REFLECTANCE
SURFACTANTS
X-RAY DIFFRACTION
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELEMENTS
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RELAXATION
SCATTERING
SEMIMETALS
SURFACE PROPERTIES 360603* -- Materials-- Properties
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2146-2149
Dostęp URL :
http://www.osti.gov/scitech/biblio/7115768
Konferencja
Tytuł :
Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy
Współwytwórcy :
Hoechst, H [Univ. of Wisconsin, Madison, Stoughton (United States)]
Temat :
36 MATERIALS SCIENCE CADMIUM SULFIDES
STRESS RELAXATION
GALLIUM ARSENIDES
BOND LENGTHS
CUBIC LATTICES
ELECTRON DIFFRACTION
MOLECULAR BEAM EPITAXY
RAMAN SPECTROSCOPY
STRAINS
STRESSES
ZINC SULFIDES
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
DIMENSIONS
EPITAXY
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
LASER SPECTROSCOPY
LENGTH
PHOSPHORS
PNICTIDES
RELAXATION
SCATTERING
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS 360603* -- Materials-- Properties
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2202-2205
Dostęp URL :
http://www.osti.gov/scitech/biblio/7115762
Konferencja
Tytuł :
Mechanisms controlling growth quality of Si-Ge superlattices in different growth directions
Współwytwórcy :
Sarma, S [Univ. of Maryland, College Park (United States)]
Temat :
36 MATERIALS SCIENCE GERMANIDES
CRYSTAL GROWTH
CRYSTAL LATTICES
SILICON
SILICON COMPOUNDS
BINDING ENERGY
BOND LENGTHS
ELASTICITY
MOLECULAR STRUCTURE
MORPHOLOGY
STABILITY
TWINNING
CRYSTAL STRUCTURE
DIMENSIONS
ELEMENTS
ENERGY
GERMANIUM COMPOUNDS
LENGTH
MECHANICAL PROPERTIES
SEMIMETALS
TENSILE PROPERTIES 360602* -- Other Materials-- Structure & Phase Studies
Źródło :
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States); 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991
Materiał oryginalny :
CONF-910115--
CODEN: JVTBD
Opis pliku :
Medium: X; Size: Pages: 2198-2201
Dostęp URL :
http://www.osti.gov/scitech/biblio/7047873
Konferencja
Tytuł :
Ca sub 4 Bi sub 6 O sub 13 , a compound containing an unusually low bismuth coordination number and short Bi hor ellipsis Bi contacts
Współwytwórcy :
Burton, B [National Institute of Standards and Technology, Gaithersburg, MD (USA)]
Temat :
36 MATERIALS SCIENCE CALCIUM OXIDES
CRYSTAL STRUCTURE
SYNTHESIS
SUPERCONDUCTORS
BISMUTH
DATA ANALYSIS
EXPERIMENTAL DATA
MEASURING INSTRUMENTS
MEASURING METHODS
ORTHORHOMBIC LATTICES
ALKALINE EARTH METAL COMPOUNDS
CALCIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL LATTICES
DATA
ELEMENTS
INFORMATION
METALS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS 360202* -- Ceramics, Cermets, & Refractories-- Structure & Phase Studies
Źródło :
Chemistry of Materials; (USA); 2:4
Materiał oryginalny :
CODEN: CMATE
Opis pliku :
Medium: X; Size: Pages: 454-458
Dostęp URL :
http://www.osti.gov/scitech/biblio/6387836
Czasopismo naukowe
Tytuł :
Numerical studies of diffusion in the presence of finite traps
Współwytwórcy :
Culvahous, J
Temat :
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL LATTICES
DIFFUSION
COMPUTERIZED SIMULATION
INTERFACES
MICROSTRUCTURE
STATISTICAL MODELS
SURFACES
THEORETICAL DATA
CRYSTAL STRUCTURE
DATA
INFORMATION
MATHEMATICAL MODELS
NUMERICAL DATA
SIMULATION 656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
Źródło :
Appl. Phys. Commun.; (United States); 7:1-2
Materiał oryginalny :
CODEN: APCOD
Opis pliku :
Medium: X; Size: Pages: 88
Dostęp URL :
http://www.osti.gov/scitech/biblio/6202563
Czasopismo naukowe

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