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Tytuł :
Observation of Photonic Antichiral Edge States.
Autorzy :
Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Liu GG; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Yang Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Hu YH; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Ma S; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Xue H; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Wang Q; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Zhang B; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
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Źródło :
Physical review letters [Phys Rev Lett] 2020 Dec 31; Vol. 125 (26), pp. 263603.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Observation of nonreciprocal magnetophonon effect in nonencapsulated few-layered CrI 3 .
Autorzy :
Liu Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Guo K; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Hu G; Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore.
Shi Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Li Y; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Chen H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lin ML; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Liu S; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Cheng Y; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Liu XL; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Xie J; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Tan PH; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China. .
Qiu CW; Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore. .
Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China. .
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Źródło :
Science advances [Sci Adv] 2020 Oct 23; Vol. 6 (43). Date of Electronic Publication: 2020 Oct 23 (Print Publication: 2020).
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Photonic amorphous topological insulator.
Autorzy :
Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, 610054 Chengdu, China.
Liu GG; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371 Singapore.
Ren X; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, 610054 Chengdu, China.
Yang Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371 Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798 Singapore.
Xue H; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371 Singapore.
Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, 610054 Chengdu, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, 610054 Chengdu, China.
Chong Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371 Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798 Singapore.
Zhang B; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371 Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798 Singapore.
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Źródło :
Light, science & applications [Light Sci Appl] 2020 Jul 24; Vol. 9, pp. 133. Date of Electronic Publication: 2020 Jul 24 (Print Publication: 2020).
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
An Anomalous Magneto-Optic Effect in Epitaxial Indium Selenide Layers.
Autorzy :
Fu W; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
Zhao X; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
Wang K; Xidian University, No. 2 Taibai Road, Xi'an, 710071 Shaanxi Province, China.; Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore.
Chen Z; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Leng K; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Fu D; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
Song P; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Wang H; Xidian University, No. 2 Taibai Road, Xi'an, 710071 Shaanxi Province, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Pennycook SJ; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
Zhang G; Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore.
Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Loh KP; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
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Źródło :
Nano letters [Nano Lett] 2020 Jul 08; Vol. 20 (7), pp. 5330-5338. Date of Electronic Publication: 2020 Jun 11.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Toward Easy-to-Assemble, Large-Area Smart Windows: All-in-One Cross-Linked Electrochromic Material and Device.
Autorzy :
Zheng R; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Wang Y; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Pan J; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Malik HA; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Zhang H; School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, Guangxi, P. R. China.
Jia C; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Weng X; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Xie J; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Deng L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Jun 17; Vol. 12 (24), pp. 27526-27536. Date of Electronic Publication: 2020 Jun 04.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS 2 .
Autorzy :
Li Q; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Zhao X; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Shi Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Liu S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
Wei Q; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University, Nanjing, 211816, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Cheng Y; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University, Nanjing, 211816, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Gao W; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
Huang W; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Nanjing Tech University, Nanjing, 211816, China.
Qiu CW; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
Xiang G; College of Physical Science and Technology, Sichuan University, Chengdu, 610064, China.
Pennycook SJ; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
Xiong Q; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
Loh KP; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117549, Singapore.
Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.
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Źródło :
ACS nano [ACS Nano] 2020 Apr 28; Vol. 14 (4), pp. 4636-4645. Date of Electronic Publication: 2020 Mar 17.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Switching the Optical Chirality in Magnetoplasmonic Metasurfaces Using Applied Magnetic Fields.
Autorzy :
Qin J; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
Kang T; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
Nie L; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
Feng H; Instituto de Micro y Nanotecnologı́a (IMN-CNM), CSIC (CEI UAM+CSIC), Isaac Newton, 8, Tres Cantos 28760, Madrid, Spain.
Wang H; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
Yang R; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
Liang X; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.; College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China.
Tang T; College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China.
Shen J; Dongguan ROE Technology Co., Ltd., Dongguan 523000, China.
Li C; Hainan University, No. 58, Renmin Avenue, Haikou, Hainan Province 570228, China.; Dongguan ROE Technology Co., Ltd., Dongguan 523000, China.
Wang H; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
Luo Y; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
Armelles G; Instituto de Micro y Nanotecnologı́a (IMN-CNM), CSIC (CEI UAM+CSIC), Isaac Newton, 8, Tres Cantos 28760, Madrid, Spain.
Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China.
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Źródło :
ACS nano [ACS Nano] 2020 Mar 24; Vol. 14 (3), pp. 2808-2816. Date of Electronic Publication: 2020 Feb 21.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Spin-Valley Locking Effect in Defect States of Monolayer MoS 2 .
Autorzy :
Wang Y; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Wei Q; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Wan Y; State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Liu Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lu X; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Li Y; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Chen H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Cheng Y; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Zhao X; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore.
Ye Y; State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Huang W; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Pennycook SJ; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore.
Loh KP; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 117549, Singapore.
Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
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Źródło :
Nano letters [Nano Lett] 2020 Mar 11; Vol. 20 (3), pp. 2129-2136. Date of Electronic Publication: 2020 Feb 24.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
High-Temperature Oxidation-Resistant ZrN 0.4 B 0.6 /SiC Nanohybrid for Enhanced Microwave Absorption.
Autorzy :
Jian X; School of Materials and Energy, Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , China.; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Tian W; School of Materials and Energy, Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , China.
Li J; School of Materials and Energy, Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Zhou Z; Key Laboratory of Advanced Technologies of Materials, School of Materials Science and Engineering , Southwest Jiaotong University , Chengdu 610031 , China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Yin L; School of Materials and Energy, Center for Applied Chemistry , University of Electronic Science and Technology of China , Chengdu 611731 , China.; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Mahmood N; School of Engineering , RMIT University , 124 La Trobe Street , 3001 Melbourne , Victoria , Australia.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2019 May 01; Vol. 11 (17), pp. 15869-15880. Date of Electronic Publication: 2019 Apr 19.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Enhanced Second Harmonic Generation from Ferroelectric HfO 2 -Based Hybrid Metasurfaces.
Autorzy :
Qin J; National Engineering Center of Electromagnetic Radiation Wave Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Huang F; National Engineering Center of Electromagnetic Radiation Wave Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Li X; School of Materials Science and Engineering, National Institute for Advanced Materials , Nankai University , Tongyan Road 38 , Tianjin 300350 , P. R. China.; Institute for Molecules and Materials (IMM) , Radboud University , Heyendaalseweg 135 , 6525AJ Nijmegen , The Netherlands.
Deng L; National Engineering Center of Electromagnetic Radiation Wave Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Kang T; National Engineering Center of Electromagnetic Radiation Wave Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Markov A; INRS-Énergie , Matériaux et Télécommunications , Varennes , QC G1K 9A9 , Canada.
Yue F; INRS-Énergie , Matériaux et Télécommunications , Varennes , QC G1K 9A9 , Canada.
Chen Y; College of Mechanical and Vehicle Engineering , Hunan University , Changsha 410082 , China.
Wen X; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371.
Liu S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371.
Xiong Q; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371.
Semin S; Institute for Molecules and Materials (IMM) , Radboud University , Heyendaalseweg 135 , 6525AJ Nijmegen , The Netherlands.
Rasing T; Institute for Molecules and Materials (IMM) , Radboud University , Heyendaalseweg 135 , 6525AJ Nijmegen , The Netherlands.
Modotto D; Dipartimento di Ingegneria dell'Informazione , Università di Brescia , via Branze 38 , 25123 Brescia , Italy.
Morandotti R; INRS-Énergie , Matériaux et Télécommunications , Varennes , QC G1K 9A9 , Canada.; ITMO University , St. Petersburg 197101 , Russia.; Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Xu J; School of Materials Science and Engineering, National Institute for Advanced Materials , Nankai University , Tongyan Road 38 , Tianjin 300350 , P. R. China.
Duan H; College of Mechanical and Vehicle Engineering , Hunan University , Changsha 410082 , China.
Bi L; National Engineering Center of Electromagnetic Radiation Wave Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
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Źródło :
ACS nano [ACS Nano] 2019 Feb 26; Vol. 13 (2), pp. 1213-1222. Date of Electronic Publication: 2019 Jan 23.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Intelligent Biomimetic Chameleon Skin with Excellent Self-Healing and Electrochromic Properties.
Autorzy :
Zheng R; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Wang Y; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Jia C; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Wan Z; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Luo J; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Malik HA; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Weng X; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Xie J; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
Deng L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , PR China.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2018 Oct 17; Vol. 10 (41), pp. 35533-35538. Date of Electronic Publication: 2018 Oct 05.
Typ publikacji :
Journal Article
MeSH Terms :
Color*
Skin, Artificial*
Biomimetic Materials/*chemistry
Silver/*chemistry
Electrodes
Czasopismo naukowe
Tytuł :
Author Correction: Ultra-thin high-efficiency mid-infraredtransmissive Huygens meta-optics.
Autorzy :
Zhang L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Ding J; School of Information and Science Technology, East China Normal University, Shanghai, 200062, China.; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
Zheng H; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
An S; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
Lin H; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Zheng B; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
Du Q; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Yin G; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Michon J; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Zhang Y; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Fang Z; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Shalaginov MY; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Deng L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
Gu T; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. .
Zhang H; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA. .
Hu J; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. .
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Źródło :
Nature communications [Nat Commun] 2018 Jun 14; Vol. 9 (1), pp. 2399. Date of Electronic Publication: 2018 Jun 14.
Typ publikacji :
Journal Article; Published Erratum
Czasopismo naukowe
Tytuł :
Design of Phase Gradient Coding Metasurfaces for Broadband Wave Modulating.
Autorzy :
Zhou Y; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zhang G; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Chen H; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China. .
Zhou P; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Wang X; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zhang L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zhang L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Xie J; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Deng L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu, 610054, China.
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Źródło :
Scientific reports [Sci Rep] 2018 Jun 06; Vol. 8 (1), pp. 8672. Date of Electronic Publication: 2018 Jun 06.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Ultra-thin high-efficiency mid-infrared transmissive Huygens meta-optics.
Autorzy :
Zhang L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Ding J; School of Information and Science Technology, East China Normal University, Shanghai, 200062, China.; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
Zheng H; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
An S; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
Lin H; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Zheng B; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA.
Du Q; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Yin G; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Michon J; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Zhang Y; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Fang Z; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Shalaginov MY; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Deng L; State Key Laboratory of Electronic Thin Films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 611731, China.
Gu T; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. .
Zhang H; Department of Electrical & Computer Engineering, University of Massachusetts Lowell, Lowell, MA, 01854, USA. .
Hu J; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. .
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Źródło :
Nature communications [Nat Commun] 2018 Apr 16; Vol. 9 (1), pp. 1481. Date of Electronic Publication: 2018 Apr 16.
Typ publikacji :
Journal Article; Research Support, Non-U.S. Gov't
Czasopismo naukowe
Tytuł :
Thickness-dependent Magnetic and Microwave Resonance Characterization of Combined Stripe Patterned FeCoBSi Films.
Autorzy :
Zhang L; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China. .; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China. .
Liu Y; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zheng H; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zhu W; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zhang M; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zhang L; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Zhou P; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Chen H; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Wang X; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Lu H; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Xie J; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Deng L; State Key Laboratory of Electronic Thin films and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, Chengdu, 610054, China.; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
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Źródło :
Nanoscale research letters [Nanoscale Res Lett] 2018 Apr 12; Vol. 13 (1), pp. 97. Date of Electronic Publication: 2018 Apr 12.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Heterostructured Nanorings of Fe-Fe 3 O 4 @C Hybrid with Enhanced Microwave Absorption Performance.
Autorzy :
Jian X; School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 611731 , China.; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Xiao X; School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 611731 , China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Tian W; School of Materials and Energy , University of Electronic Science and Technology of China , Chengdu 611731 , China.
Wang X; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , China.
Mahmood N; School of Engineering , RMIT University , 124 La Trobe Street , 3001 Melbourne , Victoria , Australia.; Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials , University of Wollongong , North Wollongong 2500 , Australia.
Dou S; Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials , University of Wollongong , North Wollongong 2500 , Australia.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2018 Mar 21; Vol. 10 (11), pp. 9369-9378. Date of Electronic Publication: 2018 Mar 06.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
The effect of ethylene glycol on pore arrangement of anodic aluminium oxide prepared by hard anodization.
Autorzy :
Guo Y; National Engineering Researching Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
Zhang L; National Engineering Researching Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
Han M; National Engineering Researching Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
Wang X; National Engineering Researching Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
Xie J; National Engineering Researching Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
Deng L; National Engineering Researching Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.; Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.
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Źródło :
Royal Society open science [R Soc Open Sci] 2018 Mar 07; Vol. 5 (3), pp. 171412. Date of Electronic Publication: 2018 Mar 07 (Print Publication: 2018).
Typ publikacji :
Journal Article
Czasopismo naukowe

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