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Wyszukujesz frazę ""Deng, Longjiang"" wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł :
An Anomalous Magneto-Optic Effect in Epitaxial Indium Selenide Layers.
Autorzy :
Fu W; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
Zhao X; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
Wang K; Xidian University, No. 2 Taibai Road, Xi'an, 710071 Shaanxi Province, China.; Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore.
Chen Z; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Leng K; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Fu D; Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
Song P; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Wang H; Xidian University, No. 2 Taibai Road, Xi'an, 710071 Shaanxi Province, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Pennycook SJ; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
Zhang G; Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore.
Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Loh KP; Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Pokaż więcej
Źródło :
Nano letters [Nano Lett] 2020 Jul 08; Vol. 20 (7), pp. 5330-5338. Date of Electronic Publication: 2020 Jun 11.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Spin-Valley Locking Effect in Defect States of Monolayer MoS 2 .
Autorzy :
Wang Y; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Wei Q; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Wan Y; State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Liu Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lu X; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Li Y; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Chen H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Cheng Y; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Zhao X; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore.
Ye Y; State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Huang W; Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Pennycook SJ; Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore.
Loh KP; Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 117549, Singapore.
Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Pokaż więcej
Źródło :
Nano letters [Nano Lett] 2020 Mar 11; Vol. 20 (3), pp. 2129-2136. Date of Electronic Publication: 2020 Feb 24.
Typ publikacji :
Journal Article
Czasopismo naukowe
    Wyświetlanie 1-2 z 2

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