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Wyszukujesz frazę ""Deng, Longjiang"" wg kryterium: Autor


Tytuł :
High antioxidant lamellar structure Cr2AlC: Dielectric and microwave absorption properties in X band.
Autorzy :
Zhang, Yin (AUTHOR)
Wen, Jing (AUTHOR)
Zhang, Li (AUTHOR)
Lu, Haipeng (AUTHOR)
Guo, Yang (AUTHOR)
Ma, Xiaodong (AUTHOR)
Zhang, Min (AUTHOR)
Yin, Juhang (AUTHOR)
Dai, Linglu (AUTHOR)
Jian, Xian (AUTHOR)
Yin, Liangjun (AUTHOR)
Xie, Jianliang (AUTHOR)
Liang, Difei (AUTHOR)
Deng, Longjiang (AUTHOR)
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Źródło :
Journal of Alloys & Compounds. Apr2021, Vol. 860, pN.PAG-N.PAG. 1p.
Czasopismo naukowe
Tytuł :
Hybrid silica-carbon bilayers anchoring on FeSiAl surface with bifunctions of enhanced anti-corrosion and microwave absorption.
Autorzy :
Tian, Wei (AUTHOR)
Zhang, Xingzhong (AUTHOR)
Guo, Yang (AUTHOR)
Mu, Chunhong (AUTHOR)
Zhou, Peiheng (AUTHOR)
Yin, Liangjun (AUTHOR)
Zhang, Linbo (AUTHOR)
Zhang, Li (AUTHOR)
Lu, Haipeng (AUTHOR)
Jian, Xian (AUTHOR)
Deng, Longjiang (AUTHOR)
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Źródło :
Carbon. Mar2021, Vol. 173, p185-193. 9p.
Czasopismo naukowe
Tytuł :
Large-scale, power-efficient Au/VO2 active metasurfaces for ultrafast optical modulation.
Autorzy :
Kang, Tongtong
Ma, Zongwei
Qin, Jun
Peng, Zheng
Yang, Weihao
Huang, Taixing
Xian, Shilin
Xia, Shuang
Yan, Wei
Yang, Yucong
Sheng, Zhigao
Shen, Jian
Li, Chaoyang
Deng, Longjiang
Bi, Lei
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Temat :
OPTICAL modulation
SURFACE plasmon resonance
LIGHT transmission
OPTICAL switches
COLLOIDAL crystals
FEMTOSECOND lasers
Źródło :
Nanophotonics (21928606); Feb2021, Vol. 10 Issue 2, p909-918, 10p
Czasopismo naukowe
Tytuł :
Observation of Photonic Antichiral Edge States.
Autorzy :
Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Liu GG; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Yang Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Hu YH; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Ma S; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Xue H; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Wang Q; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Zhang B; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
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Źródło :
Physical review letters [Phys Rev Lett] 2020 Dec 31; Vol. 125 (26), pp. 263603.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Observation of nonreciprocal magnetophonon effect in nonencapsulated few-layered CrI 3 .
Autorzy :
Liu Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Guo K; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Hu G; Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore.
Shi Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Li Y; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Chen H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Lin ML; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Liu S; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Cheng Y; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
Liu XL; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Xie J; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Tan PH; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China. .
Qiu CW; Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore. .
Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China. .
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Źródło :
Science advances [Sci Adv] 2020 Oct 23; Vol. 6 (43). Date of Electronic Publication: 2020 Oct 23 (Print Publication: 2020).
Typ publikacji :
Journal Article
Czasopismo naukowe

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