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Title:: The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
Authors:: Kaczer, B.
Franco, J.
Weckx, P.
Roussel, Ph.J.
Simicic, M.
Putcha, V.
Bury, E.
Cho, M.
Degraeve, R.
Linten, D.
Groeseneken, G.
Debacker, P.
Parvais, B.
Raghavan, P.
Catthoor, F.
Rzepa, G.
Waltl, M.
Goes, W.
Grasser, T.; Show more
Source:: In Solid State Electronics November 2016 125:52-62

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Title:: Stack optimization of oxide-based RRAM for fast write speed (
Authors:: Chen, C.Y.
Goux, L.
Fantini, A.
Degraeve, R.
Redolfi, A.
Groeseneken, G.
Jurczak, M.; Show more
Source:: In Solid State Electronics November 2016 125:198-203

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Title:: Recent Trends in Bias Temperature Instability
Authors:: Kaczer, B.
Grasser, T.
Franco, J.
Toledano-Luque, M.
Roussel, J.
Cho, M.
Simoen, E.
Groeseneken, G.Aff4, Aff6; Show more
Source:: Circuit Design for Reliability. :5-19

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Title:: Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode
Authors:: Chen, Y.Y.
Goux, L.
Pantisano, L.
Swerts, J.
Adelmann, C.
Mertens, S.
Afanasiev, V.V.
Wang, X.P.
Govoreanu, B.
Degraeve, R.
Kubicek, S.
Paraschiv, V.
Verbrugge, B.
Jossart, N.
Altimime, L.
Jurczak, M.
Kittl, J.
Groeseneken, G.
Wouters, D.J.; Show more
Source:: In Microelectronic Engineering December 2013 112:92-96

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Title:: Gate current random telegraph noise and single defect conduction
Authors:: Kaczer, B.
Toledano-Luque, M.
Goes, W.
Grasser, T.
Groeseneken, G.; Show more
Source:: In Microelectronic Engineering September 2013 109:123-125

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Title:: Statistical insight into controlled forming and forming free stacks for HfOx RRAM
Authors:: Raghavan, N.
Fantini, A.
Degraeve, R.
Roussel, P.J.
Goux, L.
Govoreanu, B.
Wouters, D.J.
Groeseneken, G.
Jurczak, M.; Show more
Source:: In Microelectronic Engineering September 2013 109:177-181

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Title:: Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components
Authors:: Toledano-Luque, M.
Kaczer, B.
Aoulaiche, M.
Spessot, A.
Roussel, Ph.J.
Ritzenthaler, R.
Schram, T.
Thean, A.
Groeseneken, G.; Show more
Source:: In Microelectronic Engineering September 2013 109:314-317

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Title:: Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Authors:: Ma, J.
Zhang, J.F.
Ji, Z.
Benbakhti, B.
Duan, M.
Zhang, W.
Zheng, X.F.
Mitard, J.
Kaczer, B.
Groeseneken, G.
Hall, S.
Robertson, J.
Chalker, P.; Show more
Source:: In Microelectronic Engineering September 2013 109:43-45

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Title:: Superior reliability of high mobility (Si)Ge channel pMOSFETs
Authors:: Franco, J.
Kaczer, B.
Toledano-Luque, M.
Roussel, Ph.J.
Cho, M.
Kauerauf, T.
Mitard, J.
Eneman, G.
Witters, L.
Grasser, T.
Groeseneken, G.; Show more
Source:: In Microelectronic Engineering September 2013 109:250-256

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Title:: Towards CMOS-compatible single-walled carbon nanotube resonators
Authors:: Pathangi, H.
Cherman, V.
Khaled, A.
Soree, B.
Groeseneken, G.
Witvrouw, A.; Show more
Source:: In Microelectronic Engineering July 2013 107:219-222

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Title:: Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks
Authors:: Ritzenthaler, R.
Schram, T.
Bury, E.
Spessot, A.
Caillat, C.
Srividya, V.
Sebaai, F.
Mitard, J.
Ragnarsson, L.-Å.
Groeseneken, G.
Horiguchi, N.
Fazan, P.
Thean, A.; Show more
Source:: In Solid State Electronics June 2013 84:22-27

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Title:: Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
Authors:: Vandooren, A.
Leonelli, D.
Rooyackers, R.
Hikavyy, A.
Devriendt, K.
Demand, M.
Loo, R.
Groeseneken, G.
Huyghebaert, C.; Show more
Source:: In Solid State Electronics May 2013 83:50-55

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Title:: A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
Authors:: Amat, E.
Kauerauf, T.
Rodriguez, R.
Nafria, M.
Aymerich, X.
Degraeve, R.
Groeseneken, G.; Show more
Source:: In Microelectronic Engineering March 2013 103:144-149

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Title:: Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Authors:: Franco, J.
Kaczer, B.
Vais, A.Aff1, Aff2
Alian, A.
Arimura, H.
Putcha, V.Aff1, Aff2
Sioncke, S.
Waldron, N.
Zhou, D.
Nyns, L.
Mitard, J.
Witters, L.
Heyns, M.Aff1, Aff2
Groeseneken, G.Aff1, Aff2
Collaert, N.
Linten, D.
Thean, A.; Show more
Source:: MRS Advances. 1(49):3329-3340

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Title:: Dielectrophoretic assembly of suspended single-walled carbon nanotubes
Authors:: Pathangi, H.
Groeseneken, G.
Witvrouw, A.; Show more
Source:: In Microelectronic Engineering October 2012 98:218-221

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Title:: Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
Authors:: Vandooren, A.
Leonelli, D.
Rooyackers, R.
Arstila, K.
Groeseneken, G.
Huyghebaert, C.; Show more
Source:: In Solid State Electronics June 2012 72:82-87

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Title:: Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Authors:: Leonelli, D.
Vandooren, A.
Rooyackers, R.
De Gendt, S.
Heyns, M.M.
Groeseneken, G.; Show more
Source:: In Solid State Electronics November-December 2011 65-66:28-32

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Title:: Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics
Authors:: Toledano-Luque, M.
Kaczer, B.
Simoen, E.
Roussel, Ph. J.
Veloso, A.
Grasser, T.
Groeseneken, G.; Show more
Source:: In Microelectronic Engineering 2011 88(7):1243-1246

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Title:: On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si 0.45Ge 0.55 pMOSFETs
Authors:: Franco, J.
Kaczer, B.
Toledano-Luque, M.
Roussel, Ph. J.
Hehenberger, P.
Grasser, T.
Mitard, J.
Eneman, G.
Witters, L.
Hoffmann, T.Y.
Groeseneken, G.; Show more
Source:: In Microelectronic Engineering 2011 88(7):1388-1391

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Title:: IMPACT OF HIGH-κ PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS
Authors:: PANTISANO, LUIGI
RAGNARSSON, L-Å.
HOUSSA, M.
DEGRAEVE, R.
GROESENEKEN, G.
SCHRAM, T.
DEGENDT, S.
HEYNS, M.
AFANAS’EV, V.; Show more
Source:: Defects in High-k Gate Dielectric Stacks : Nano-Electronic Semiconductor Devices. 220:97-108

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