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Go to position: 12. Title: The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits Authors: Kaczer, B.Franco, J.Weckx, P.Roussel, Ph.J.Simicic, M.Putcha, V.Bury, E.Cho, M.Degraeve, R.Linten, D.Groeseneken, G.Debacker, P.Parvais, B.Raghavan, P.Catthoor, F.Rzepa, G.Waltl, M.Goes, W.Grasser, T. Show more Source: In Solid State Electronics November 2016 125:52-62 Academic Journal in the bookshelf Details
Go to position: 13. Title: Stack optimization of oxide-based RRAM for fast write speed ( Authors: Chen, C.Y.Goux, L.Fantini, A.Degraeve, R.Redolfi, A.Groeseneken, G.Jurczak, M. Show more Source: In Solid State Electronics November 2016 125:198-203 Academic Journal in the bookshelf Details
Go to position: 14. Title: Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs Authors: Franco, J.Kaczer, B.Vais, A.Aff1, Aff2Alian, A.Arimura, H.Putcha, V.Aff1, Aff2Sioncke, S.Waldron, N.Zhou, D.Nyns, L.Mitard, J.Witters, L.Heyns, M.Aff1, Aff2Groeseneken, G.Aff1, Aff2Collaert, N.Linten, D.Thean, A. Show more Source: MRS Advances. 1(49):3329-3340 Academic Journal in the bookshelf Details
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