- Tytuł:
- Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM.
- Autorzy:
- Źródło:
- Acta Physica Polonica: A. May2011, Vol. 119 Issue 5, p660-662. 3p. 2 Color Photographs, 1 Chart, 2 Graphs.
Czasopismo naukowe