- Tytuł:
- Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study.
- Autorzy:
- Temat:
-
SELECTIVE area epitaxy
SILICON compounds
SURFACE orientation (Chemistry) - Źródło:
- AIP Advances; 2016, Vol. 6 Issue 9, p1-10, 10p
Czasopismo naukowe