Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Przeglądasz jako GOŚĆ

Wyszukujesz frazę ""Ivanov, S. V."" wg kryterium: Wszystkie pola


Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Index Terms :
Contribution in Book/Report/Proceedings
PeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007. Springer, Guildford, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
https://eprints.lancs.ac.uk/id/eprint/56925">https://eprints.lancs.ac.uk/id/eprint/56925
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Index Terms :
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, Peter and Zhuang, Qian and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
https://doi.org/10.1007/978-1-4020-8425-6">https://doi.org/10.1007/978-1-4020-8425-6
https://eprints.lancs.ac.uk/id/eprint/27094">https://eprints.lancs.ac.uk/id/eprint/27094
https://doi.org/10.1007/978-1-4020-8425-6">https://doi.org/10.1007/978-1-4020-8425-6
Zasób elektroniczny
Tytuł :
Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes
Index Terms :
Journal Article
NonPeerReviewed
Źródło :
Carrington, Peter and Solov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE, 6900. ISSN 0277-786X
URL :
https://doi.org/10.1117/12.755465">https://doi.org/10.1117/12.755465
https://eprints.lancs.ac.uk/id/eprint/27089">https://eprints.lancs.ac.uk/id/eprint/27089
https://doi.org/10.1117/12.755465">https://doi.org/10.1117/12.755465
Zasób elektroniczny
Tytuł :
Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
Index Terms :
Journal Article
PeerReviewed
Źródło :
Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118
URL :
https://doi.org/10.1063/1.2976551">https://doi.org/10.1063/1.2976551
https://eprints.lancs.ac.uk/id/eprint/27066">https://eprints.lancs.ac.uk/id/eprint/27066
https://doi.org/10.1063/1.2976551">https://doi.org/10.1063/1.2976551
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Index Terms :
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007 :. Springer, DORDRECHT, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/56925">http://eprints.lancs.ac.uk/56925
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Index Terms :
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007 :. Springer, DORDRECHT, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/56925">http://eprints.lancs.ac.uk/56925
Zasób elektroniczny
Tytuł :
Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
Index Terms :
Journal Article
PeerReviewed
Źródło :
Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118
URL :
http://eprints.lancs.ac.uk/27066">http://eprints.lancs.ac.uk/27066
Zasób elektroniczny
Tytuł :
Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes
Index Terms :
Journal Article
NonPeerReviewed
Źródło :
Carrington, Peter and Solov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE, 6900. ISSN 0277-786X
URL :
http://eprints.lancs.ac.uk/27089">http://eprints.lancs.ac.uk/27089
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Index Terms :
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, Peter and Zhuang, Qian and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK :. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/27094">http://eprints.lancs.ac.uk/27094
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Index Terms :
QC Physics
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007. Springer, DORDRECHT, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/56925">http://eprints.lancs.ac.uk/56925
Zasób elektroniczny
Tytuł :
Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes
Index Terms :
QC Physics
Article
NonPeerReviewed
Źródło :
Carrington, Peter and Solov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE, 6900. ISSN 0277-786X
URL :
http://eprints.lancs.ac.uk/27089/">http://eprints.lancs.ac.uk/27089/
http://dx.doi.org/10.1117/12.755465">http://dx.doi.org/10.1117/12.755465
http://eprints.lancs.ac.uk/27089">http://eprints.lancs.ac.uk/27089
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Index Terms :
QC Physics
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, Peter and Zhuang, Qian and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/27094/">http://eprints.lancs.ac.uk/27094/
http://dx.doi.org/10.1007/978-1-4020-8425-6">http://dx.doi.org/10.1007/978-1-4020-8425-6
http://eprints.lancs.ac.uk/27094">http://eprints.lancs.ac.uk/27094
Zasób elektroniczny
Tytuł :
Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
Index Terms :
QC Physics
Article
PeerReviewed
Źródło :
Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118
URL :
http://eprints.lancs.ac.uk/27066/">http://eprints.lancs.ac.uk/27066/
http://dx.doi.org/10.1063/1.2976551">http://dx.doi.org/10.1063/1.2976551
http://eprints.lancs.ac.uk/27066">http://eprints.lancs.ac.uk/27066
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Index Terms :
QC Physics
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007. Springer, DORDRECHT, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/56925">http://eprints.lancs.ac.uk/56925
Zasób elektroniczny
Tytuł :
Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
Index Terms :
QC Physics
Article
PeerReviewed
Źródło :
Carrington, P. J. and Solov'ev, V. A. and Zhuang, Q. and Krier, A. and Ivanov, S. V. (2008) Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Applied Physics Letters, 93 (9). 091101. ISSN 1077-3118
URL :
http://eprints.lancs.ac.uk/27066/">http://eprints.lancs.ac.uk/27066/
http://dx.doi.org/10.1063/1.2976551">http://dx.doi.org/10.1063/1.2976551
http://eprints.lancs.ac.uk/27066">http://eprints.lancs.ac.uk/27066
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Index Terms :
QC Physics
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, Peter and Zhuang, Qian and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Springer Proceedings in Physics (119). Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, Bristol, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/27094/">http://eprints.lancs.ac.uk/27094/
http://dx.doi.org/10.1007/978-1-4020-8425-6">http://dx.doi.org/10.1007/978-1-4020-8425-6
http://eprints.lancs.ac.uk/27094">http://eprints.lancs.ac.uk/27094
Zasób elektroniczny
Tytuł :
Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes
Index Terms :
QC Physics
Article
NonPeerReviewed
Źródło :
Carrington, Peter and Solov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE, 6900. ISSN 0277-786X
URL :
http://eprints.lancs.ac.uk/27089/">http://eprints.lancs.ac.uk/27089/
http://dx.doi.org/10.1117/12.755465">http://dx.doi.org/10.1117/12.755465
http://eprints.lancs.ac.uk/27089">http://eprints.lancs.ac.uk/27089
Zasób elektroniczny
Tytuł :
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Index Terms :
QC Physics
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007. Springer, DORDRECHT, pp. 129-131. ISBN 978-1-4020-8424-9
URL :
http://eprints.lancs.ac.uk/56925">http://eprints.lancs.ac.uk/56925
Zasób elektroniczny
Tytuł :
Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes - art. no. 690001
Index Terms :
QC Physics
Contribution in Book/Report/Proceedings
NonPeerReviewed
Źródło :
Carrington, P. J. and Soiov'ev, V. A. and Zhuang, Q. and Ivanov, S. V. and Krier, A. (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes - art. no. 690001. In: QUANTUM SENSING AND NANOPHOTONIC DEVICES V. SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, p. 90001. ISBN 978-0-8194-7075-1
URL :
http://dx.doi.org/10.1117/12.755465">http://dx.doi.org/10.1117/12.755465
http://eprints.lancs.ac.uk/56910">http://eprints.lancs.ac.uk/56910
Zasób elektroniczny

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies