- Tytuł:
- Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs.
- Autorzy:
- Temat:
-
MODULATION-doped field-effect transistors
PASSIVATION
METAL semiconductor field-effect transistors
GALLIUM nitride
LEAKAGE
VOLTAGE
TEMPERATURE - Źródło:
- Semiconductors; Mar2021, Vol. 55 Issue 3, p379-383, 5p
Czasopismo naukowe