- Tytuł:
- Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures.
- Autorzy:
- Temat:
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HETEROSTRUCTURES
BUFFER layers
POWER transistors
BREAKDOWN voltageGALLIUM nitride
SUPERLATTICES
SILICON nitride - Źródło:
- Physica Status Solidi. A: Applications & Materials Science; Apr2020, Vol. 217 Issue 7, p1-6, 6p
Czasopismo naukowe