- Tytuł:
-
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser
Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates. - Autorzy:
- Temat:
-
GALLIUM arsenide transistors
HETEROSTRUCTURES
QUANTUM wells
WAVELENGTHS
SUBSTRATES (Materials science) - Źródło:
- Semiconductors; Dec2018, Vol. 52 Issue 12, p1547-1550, 4p
Czasopismo naukowe